Radiant Technologies, Inc.
49Patents
13Active
49Granted
42Portfolio score
Filing activity: Jul 31, 1989 → Sep 20, 2016 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9697882B1 | Analog ferroelectric memory with improved temperature range | Physics | 86 | Active |
| US9324405B2 | CMOS analog memories utilizing ferroelectric capacitors | Physics | 83 | Active |
| US5119329A | Memory cell based on ferro-electric non volatile variable resistive element | Physics | 68 | Expired |
| US5872739A | Sense amplifier for low read-voltage memory cells | Physics | 67 | Expired |
| US5593914A | Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces | Emerging Cross-Sectional Technologies | 66 | Expired |
| US5440173A | High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5164808A | Platinum electrode structure for use in conjunction with ferroelectric materials | Electricity | 44 | Expired |
| US6066868A | Ferroelectric based memory devices utilizing hydrogen barriers and getters | Electricity | 42 | Expired |
| US5638979A | Thermal reflective packaging system | Performing Operations; Transporting | 30 | Expired |
| US5804850A | Ferroelectric based capacitor cell for use in memory systems | Electricity | 25 | Expired |
| US5679969A | Ferroelectric based capacitor for use in memory systems and method for fabricating the same | Electricity | 24 | Expired |
| US5314087A | Thermal reflective packaging system | Performing Operations; Transporting | 24 | Expired |
| US6121648A | Ferroelectric based memory devices utilizing hydrogen getters and recovery annealing | Electricity | 23 | Expired |
| US5070385A | Ferroelectric non-volatile variable resistive element | Physics | 22 | Expired |
| US6117688A | Method for constructing ferroelectric based capacitor for use in memory systems | Electricity | 20 | Expired |
| US5212620A | Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5757042A | High density ferroelectric memory with increased channel modulation and double word ferroelectric memory cell for constructing the same | Electricity | 19 | Expired |
| US5963466A | Ferroelectric memory having a common plate electrode | Electricity | 18 | Expired |
| US5789775A | High density memory and double word ferroelectric memory cell for constructing the same | Physics | 17 | Expired |
| US6194751A | Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation | Electricity | 15 | Expired |
| US5453347A | Method for constructing ferroelectric capacitors on integrated circuit substrates | Electricity | 14 | Expired |
| US5977577A | Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation | Electricity | 14 | Expired |
| US5109156A | Light actuated optical logic device | Physics | 14 | Expired |
| US5420428A | Infra-red sensing array | Electricity | 12 | Expired |
| US5051950A | Read/write optical memory | Physics | 11 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.