Apparatus for ion implantation
US5053627A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Mar 1, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for particle implantation is disclosed employing a plurality of particle generators to effectively process wafers of other target substrates carried on a rotating end station. The invention is particularly useful in SIMOX processes where implanted oxygen ions form a buried oxide layer in silicon wafers. In one embodiment, two or more stationary particle generators are disposed at different sectors of a circular track along which the wafers travel to expose the wafers in sequence as they pass. The ion sources can also be offset regularly from each other to increase the radial exposure area. In an other embodiment, the apparatus can further include at least one particle generator which scans the rotating end station in a radial direction as it rotates to insure that uniform ion doses are achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.