Scanning electron microscope based parametric testing method and apparatus
US5053699A · kind A · utility
12Cited by
5References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 25, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | May 25, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/305
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A scanning electron microscope (SEM) (24), or other irradiating device, is used to create a potential in sample areas (39b) of a test structure (39) formed on the surface of an integrated circuit wafer. A conduction path between the irradiated sample area and a common area (39a) is detected via an ammeter (40) connected between the sample area (39b) and a voltage source (42). Monitoring circuit (44) produces an output indicative of those sample areas (39b) which are electrically coupled to the common area (39a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.