Semiconductor bipolar device with phosphorus doping
US5053846A · kind A · utility
2Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 26, 1990 |
| Grant date | Oct 1, 1991 |
| Priority date | — |
| Expiry date | Jul 26, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing semiconductor devices by ion implantation, comprising the steps of, i) implanting P ions and ions selected from Si or Group II elements to the same region of GaAs or AlGaAs material, ii) performing a heat treatment to said ion implanted region for activation. Also disclosed are semiconductor devices manufactured according to this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.