Kouhei Morizuka
20Patents
10h-index
28Co-inventors
75Inventor score
Filing activity: Dec 18, 1985 → Jun 10, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5898909A | Ultra high frequency radio communication apparatus | Electricity | 50 | Expired |
| US7038250B2 | Semiconductor device suited for a high frequency amplifier | Electricity | 36 | Expired |
| US5124270A | Bipolar transistor having external base region | Emerging Cross-Sectional Technologies | 29 | Expired |
| US4679305A | Method of manufacturing a heterojunction bipolar transistor having self-aligned emitter and base and selective isolation regions | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6448859B2 | High frequency power amplifier having a bipolar transistor | Electricity | 21 | Expired |
| US4933732A | Heterojunction bipolar transistor | Electricity | 20 | Expired |
| US5331186A | Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter | Electricity | 16 | Expired |
| US6344775B1 | Semiconductor device | Electricity | 16 | Expired |
| US5510647A | Semiconductor device and method of manufacturing the same | Electricity | 11 | Expired |
| US6127716A | Heterojunction bipolar transistor and manufacturing method thereof | Electricity | 11 | Expired |
| US6051484A | Semiconductor device and method of manufacturing thereof | Electricity | 10 | Expired |
| US7329909B2 | Nitride semiconductor device | Electricity | 8 | Expired |
| US5930133A | Rectifying device for achieving a high power efficiency | Electricity | 7 | Expired |
| US6790694B2 | High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same | Electricity | 5 | Expired |
| US5898200A | Microwave integrated circuit | Electricity | 5 | Expired |
| US5266818A | Compound semiconductor device having an emitter contact structure including an I.sub.nx Ga.sub.1 -.sub.x As graded-composition layer | Electricity | 4 | Expired |
| US5637909A | Semiconductor device and method of manufacturing the same | Electricity | 3 | Expired |
| US5153692A | Semiconductor device | Electricity | 3 | Expired |
| US5053846A | Semiconductor bipolar device with phosphorus doping | Electricity | 2 | Expired |
| US6940157B2 | High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.