Controlled high rate deposition of metal oxide films
US5055319A · kind A · utility
81Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.