Semiconductor device
US5055904A · kind A · utility
7Cited by
0References
7Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 19, 1990 |
| Grant date | Oct 8, 1991 |
| Priority date | — |
| Expiry date | Mar 19, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
A semicondcutor device and a manufacturing method thereof are disclosed in which higher integration can be achieved without increasing the total manufacturing steps. The semiconductor device includes at least two MOS transistors having the same channel types, the gate electrodes of which are constructed of polycrystal silicon layers which contain an impurity, and a bipolar transistor, the base electrode of which is constructed of a polycrystal silicon layer which contains and impurity. In particular, the respective gate electrodes of the two MOS transistors contain impurities of different conductivity types from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.