Shoji Shukuri
105Patents
22h-index
97Co-inventors
93Inventor score
Filing activity: Apr 15, 1986 → Dec 26, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6614684B1 | Semiconductor integrated circuit and nonvolatile memory element | Physics | 294 | Expired |
| US6724657B2 | Semiconductor device with improved latch arrangement | Physics | 241 | Expired |
| US6771538B2 | Semiconductor integrated circuit and nonvolatile memory element | Physics | 155 | Expired |
| US5355330A | Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode | Electricity | 111 | Expired |
| US5072286A | Semiconductor memory device having memory cells including IG FETs in a symmetrical arrangement | Emerging Cross-Sectional Technologies | 74 | Expired |
| US4983540A | Method of manufacturing devices having superlattice structures | Emerging Cross-Sectional Technologies | 73 | Expired |
| US6121086A | Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device | Electricity | 72 | Expired |
| US6569742B1 | Method of manufacturing semiconductor integrated circuit device having silicide layers | Emerging Cross-Sectional Technologies | 69 | Expired |
| US6762449B2 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND THE PROCESS OF MANUFACTURING THE SAME HAVING POLY-SILICON PLUG, WIRING TRENCHES AND BIT LINES FORMED IN THE WIRING TRENCHES HAVING A WIDTH FINER THAN A PREDETERMINED SIZE | Electricity | 64 | Expired |
| US6201733A | Semiconductor integrated circuit device, memory module and storage device | Physics | 60 | Expired |
| US7045848B2 | Semiconductor integrated circuit device and a method of manufacturing the same | Electricity | 37 | Expired |
| US5113072A | Device having superlattice structure, and method of and apparatus for manufacturing the same | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4808546A | SOI process for forming a thin film transistor using solid phase epitaxy | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6941505B2 | Data processing system and data processing method | Physics | 27 | Expired |
| US6069038A | Method of manufacturing a semiconductor integrated circuit device | Electricity | 27 | Expired |
| US5814543A | Method of manufacturing a semicondutor integrated circuit device having nonvolatile memory cells | Electricity | 25 | Expired |
| US6324103A | Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device | Physics | 25 | Expired |
| US6376316B2 | Method for manufacturing semiconductor integrated circuit device having deposited layer for gate insulation | Electricity | 25 | Expired |
| US6529407B2 | Semiconductor device with improved latch arrangement | Physics | 24 | Expired |
| US5270232A | Process for fabricating field effect transistor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6449197B1 | Semiconductor integrated circuit device, memory module, storage device | Physics | 23 | Expired |
| US6466482B2 | Semiconductor device | Physics | 22 | Expired |
| US6211003A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 20 | Expired |
| US7015090B2 | Method of manufacturing a semiconductor device having trenches for isolation and capacitor formation trenches | Electricity | 19 | Expired |
| US6617632B2 | Semiconductor device and a method of manufacturing the same | Electricity | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.