Process for forming the ridge structure of a self-aligned semiconductor laser
US5059552A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1991 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Mar 15, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming the ridge structure of a self-aligned InP-system, double heterostructure (DH) laser, particularly useful for long wavelength devices as required for signal transmission systems includes a thin Si.sub.3 N.sub.4 layer (41) inserted between a photoresist mask (42) that defines the ridge structure, and a contact layer (35). Using a Si.sub.3 N.sub.4 layer (4) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si.sub.3 N.sub.4 layer (43) for device embedding, provides for the etch selectively required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.