Semiconductor integrated circuit device
US5060050A · kind A · utility
36Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1990 |
| Grant date | Oct 22, 1991 |
| Priority date | — |
| Expiry date | Aug 31, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device having copper wiring, the copper wiring is covered with impurity diffusion-preventing films each of which is made of a silicon oxide film formed by plasma CVD, a silicon nitride film, an alumina film, or a titanium nitride film, whereby the resistance of the copper wiring can be prevented from increasing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.