Method of doping a growing crystalline semiconductor film
US5061643A · kind A · utility
12Cited by
12References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 1989 |
| Grant date | Oct 29, 1991 |
| Priority date | — |
| Expiry date | Dec 27, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a semiconductor thin film by MOCVD including doping with a doping gas producing a carrier concentration regulated by the decomposition speed of the doping gas, selectively irradiating the doping gas with ultraviolet light before the doping gas reaches the growing film, whereby the decomposition speed of the doping gas is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.