Method of producing a bipolar transistor with spacers
US5063167A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1990 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Aug 28, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/111
Abstract
A method of producing a semiconductor device includes providing a collector layer comprising a first conductivity type semiconductor layer, a base layer comprising a second conductivity type semiconductor layer produced on the collector layer, an emitter layer comprising a first conductivity type semiconductor layer produced on the base layer, a contact layer comprising an undoped semiconductor layer produced on the emitter layer, second conductivity type first implantation regions produced at regions each consisting of the contact layer, the emitter layer, and the base layer, so as to leave a central region therebetween, base electrodes produced on the first implantation regions, a first conductivity type second implantation region produced by implanting impurities from the surface of the contact layer extending into the emitter layer, in a region between the first implantation regions, and an emitter electrode produced on the second implantation region. Also, a method of producing a semiconductor device includes providing an emitter layer comprising undoped semiconductor layer and a first conductivity type second implantation region produced by implanting impurities from the surf…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.