Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
US5063569A · kind A · utility
31Cited by
2References
12Claims
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Key dates
| Filing date | Dec 19, 1990 |
| Grant date | Nov 5, 1991 |
| Priority date | — |
| Expiry date | Dec 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical-cavity surface-emitting semiconductive laser has non-epitaxial multilayered dielectric reflectors located on both its top and its bottom surfaces, in order to facilitate fabrication of the reflectors and achieve high optical cavity gain and low electrical power dissipation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.