Selective deposition process for physical vapor deposition
US5064681A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1989 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Jun 8, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/146
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.