Photoelectric converting device with accumulating gate region
US5065206A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 25, 1989 |
| Grant date | Nov 12, 1991 |
| Priority date | — |
| Expiry date | Jan 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
Abstract
A semiconductor device comprises a semiconductive substrate of a low impurity concentration, a channel area of a low impurity concentration formed on the substrate, a source area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, a drain area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, and an accumulating gate area formed on the channel area and having a conductive type same as that of the substrate. The source area and drain area are arranged in a predetermined direction along the substrate. The accumulating gate area comprises a first part sandwiched between the source area and the drain area and extended in a direction crossing the predetermined direction and second and third parts connected with the first part and approximately extended in the predetermined direction. The accumulating gate area is adapted to accumulate a charge corresponding to the intensity of the incident radiation. A current flows from one to the other of the source area and the drain area through a part of the channel area sandwiched between the first part …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.