Method for manufacturing a semiconductor device utilizing a self-aligned contact process
US5066604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1990 |
| Grant date | Nov 19, 1991 |
| Priority date | — |
| Expiry date | Sep 6, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device utilizing a self-aligned contact process is disclosed. The method for manufacturing the same provides a conducting layer which is selectively connected in self-aligned contact, through contact holes, to predetermined electrodes of a plurality of electrodes in a semiconductor device, and provides a thermal oxide layer having a sufficient thickness to insulate the conducting layer from the other electrodes. So that a selective connection between the conducting layer and the predetermined electrode which are to be connected to each other is successively achieved within a more decreased cell size, while maintaining a sufficient thickness of an insulating layer between the conducting layer and the other electrodes which must be insulated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.