Dai H. Lee
3Patents
3h-index
6Co-inventors
39Inventor score
Filing activity: Sep 6, 1990 → Feb 20, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5821766A | Method and apparatus for measuring the metallurgical channel length of a semiconductor device | Electricity | 21 | Expired |
| US5252510A | Method for manufacturing a CMOS device having twin wells and an alignment key region | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5066604A | Method for manufacturing a semiconductor device utilizing a self-aligned contact process | Electricity | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.