Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers
US5066615A · kind A · utility
75Cited by
6References
21Claims
0Family size
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Key dates
| Filing date | Aug 6, 1990 |
| Grant date | Nov 19, 1991 |
| Priority date | — |
| Expiry date | Aug 6, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antireflection coating (21) for use in integrated circuit processing consists of a film of x-silicon-nitride, where x is a metal from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten. These coatings are preferably made by sputtering, with the x silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.