Process for production of semiconductor device
US5068169A · kind A · utility
9Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1989 |
| Grant date | Nov 26, 1991 |
| Priority date | — |
| Expiry date | Oct 26, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.