Satoshi Takechi
32Patents
12h-index
20Co-inventors
77Inventor score
Filing activity: Oct 12, 1989 → Oct 18, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5968713A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 95 | Expired |
| US6013416A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 93 | Expired |
| US6329125A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 78 | Expired |
| US6200725A | Chemically amplified resist compositions and process for the formation of resist patterns | Physics | 54 | Expired |
| US5879851A | Method for forming resist patterns by using an ammonium or morpholine compound as a developer | Physics | 32 | Expired |
| US5443690A | Pattern formation material and pattern formation method | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6004720A | Radiation sensitive material and method for forming pattern | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6207342A | Chemically amplified resist material and process for the formation of resist patterns | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6344304B1 | Radiation sensitive material and method for forming pattern | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5506088A | Chemically amplified resist composition and process for forming resist pattern using same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5153103A | Resist composition and pattern formation process | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5019485A | Process of using an electrically conductive layer-providing composition for formation of resist patterns | Physics | 13 | Expired |
| US5326670A | Process for forming resist pattern | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5856071A | Resist material including si-containing resist having acid removable group combined with photo-acid generator | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5068169A | Process for production of semiconductor device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5066751A | Resist material for energy beam lithography and method of using the same | Physics | 8 | Expired |
| US5192643A | Pattern-forming method and radiation resist for use when working this pattern-forming method | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5104479A | Resist material for energy beam lithography and method of using the same | Physics | 7 | Expired |
| US5403699A | Process for formation of resist patterns | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7129017B2 | Chemically amplified resist composition and method for forming patterned film using same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6699645B2 | Method for the formation of resist patterns | Physics | 4 | Expired |
| US6120977A | Photoresist with bleaching effect | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6887649B2 | Multi-layered resist structure and manufacturing method of semiconductor device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6790580B2 | Resist material and method for forming a resist pattern with the resist material | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6248920A | Preparation process for esters and resist materials | Chemistry; Metallurgy | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.