Lateral conductivity modulated MOSFET
US5068700A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1990 |
| Grant date | Nov 26, 1991 |
| Priority date | — |
| Expiry date | Nov 29, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A lateral conductivity modulated MOSFET comprises a semiconductor wafer, a first-conductivity type base layer selectively formed in a surface region of the semiconductor wafer, a second-conductivity type source layer selectively formed in a surface region of the first-conductivity type base layer, a second-conductivity type base layer selectively formed in the semiconductor wafer, a first-conductivity type drain layer formed in a surface region of the second-conductivity type base layer, a gate insulation film formed on that surface portion of the first-conductivity type base layer which is sandwiched between the source layer and the second-conductivity type base layer, a gate electrode formed on the gate insulation film, a source electrode in contact with both the source layer and the first-conductivity type base layer, and a drain electrode in contact with the drain layer. A second-conductivity type cathode layer is formed in a surface region of the semiconductor wafer in such a manner that it is located adjacent to the second-conductivity type base layer. A cathode electrode is in contact with the cathode layer and is kept at the same potential level as that of the drain electro…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.