Transfer gate for photodiode to CCD image sensor
US5070380A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1990 |
| Grant date | Dec 3, 1991 |
| Priority date | — |
| Expiry date | Aug 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
An image sensor formed on a P-type substrate includes a plurality of pinned diode photodiodes, a CCD shift register and a separate buried transfer gate located between each of the photodiodes and the CCD shift register. The photodetectors are arranged in at least one line. The CCD shift register extends along the line of photodetectors. Each of the pinned diode photodetectors includes a first region of N-type conductivity in the substrate and a second region of P+ type conductivity in the first region and along the substrate surface. The CCD shift register includes a channel region of N-type conductivity in the substrate surface and two sets of conductive gates along the channel region and insulated from the substrate surface. Each transfer gate includes a transfer channel region of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region to the first region of its respective photodetector. Each gate of one of the sets of shift register gates may have a portion which extends over the transfer gate channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.