Semiconductor integrated circuit device and manufacturing method thereof
US5073810A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1990 |
| Grant date | Dec 17, 1991 |
| Priority date | — |
| Expiry date | Oct 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A semiconductor integrated circuit device having at least one bipolar transistor comprises a semiconductor substrate of monocrystalline silicon having a main surface; an isolation oxide layer selectively formed on the main surface so as to surround an active region of the main surface; a first silicon layer formed on the active region and extending on the isolation oxide layer and a second silicon layer stacked on the first silicon layer, wherein a collector region of a bipolar transistor is formed on the active region of the first silicon layer, the intrinsic base region is formed on the active region of the second silicon layer, and a base-lead out region which is electrically connected with the intrinsic base region is formed of the first and second silicon layers over the isolation oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.