Nobuo Owada
47Patents
14h-index
62Co-inventors
84Inventor score
Filing activity: Aug 22, 1989 → Feb 5, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6184143A | Semiconductor integrated circuit device and fabrication process thereof | Electricity | 185 | Expired |
| US5244820A | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5027188A | Semiconductor integrated circuit device in which a semiconductor chip is mounted with solder bumps for mounting to a wiring substrate | Electricity | 54 | Expired |
| US5060045A | Semiconductor integrated circuit device and method of manufacturing the same | Electricity | 45 | Expired |
| US5220199A | Semiconductor integrated circuit device in which a semiconductor chip is mounted with solder bumps for mounting to a wiring substrate | Electricity | 45 | Expired |
| US6731007B1 | Semiconductor integrated circuit device with vertically stacked conductor interconnections | Electricity | 43 | Expired |
| US6326299A | Method for manufacturing a semiconductor device | Electricity | 42 | Expired |
| US5229643A | Semiconductor apparatus and semiconductor package | Electricity | 31 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6376345B1 | Process for manufacturing semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5073810A | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 17 | Expired |
| US5780882A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5607866A | Method of fabricating a semiconductor device having silicide layers for electrodes | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6861756B2 | Semiconductor integrated circuit device and fabrication process thereof | Electricity | 13 | Expired |
| US6403459B1 | Fabrication process of semiconductor integrated circuit device | Electricity | 12 | Expired |
| US5739589A | Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6730590B2 | Semiconductor integrated circuit device and fabrication process thereof | Electricity | 11 | Expired |
| US8384220B2 | Semiconductor integrated circuit device and fabrication process thereof | Electricity | 10 | Active |
| US6864169B2 | Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device | Electricity | 9 | Expired |
| US7387957B2 | Fabrication process for a semiconductor integrated circuit device | Electricity | 8 | Expired |
| US6638854B2 | Semiconductor device and method for manufacturing the same | Electricity | 8 | Expired |
| US6458674B1 | Process for manufacturing semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6127255A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6169324A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.