Heterojunction bipolar transistor
US5073812A · kind A · utility
21Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 20, 1990 |
| Grant date | Dec 17, 1991 |
| Priority date | — |
| Expiry date | Feb 20, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an n.sup.+ type InGaAs layer at a surface of the device, a refractory metal emitter electrode making ohmic contact to the n.sup.+ layer without alloying, and an externally accessible base region produced in the neighborhood of the emitter electrode by a diffusion using the emitter electrode and an insulating side wall film as a diffusion mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.