Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5074669A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1989 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Dec 12, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/308
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus (10) designed to evaluate ion implantation levels in semiconductor samples (42) is disclosed. The device includes an intensity modulated pump laser beam (22) and a probe beam (62) having a different wavelength than the pump beam. The two laser beams are focused on a coincident spot on the surface of the sample. Detectors (80, 96) are provided for measuring the non-modulated reflected power of the pump and probe beams. In addition, the modulated reflected power of the probe beam, that is in phase with the intensity modulated pump beam, is also measured. These three independent measurements are utilized to derive the implant dosage level in the semiconductor sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.