Jon Opsal
126Patents
38h-index
25Co-inventors
90Inventor score
Filing activity: Apr 1, 1983 → Mar 28, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4999014A | Method and apparatus for measuring thickness of thin films | Physics | 360 | Expired |
| US5042951A | High resolution ellipsometric apparatus | Physics | 347 | Expired |
| US6429943B1 | Critical dimension analysis with simultaneous multiple angle of incidence measurements | Physics | 339 | Expired |
| US5181080A | Method and apparatus for evaluating the thickness of thin films | Physics | 188 | Expired |
| US7478019B2 | Multiple tool and structure analysis | Physics | 178 | Active |
| US7933026B2 | High resolution monitoring of CD variations | Physics | 158 | Active |
| US4522510A | Thin film thickness measurement with thermal waves | Physics | 156 | Expired |
| US5798837A | Thin film optical measurement system and method with calibrating ellipsometer | Physics | 154 | Expired |
| US6813034B2 | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements | Physics | 141 | Expired |
| US5877859A | Broadband spectroscopic rotating compensator ellipsometer | Physics | 137 | Expired |
| US6278519A | Apparatus for analyzing multi-layer thin film stacks on semiconductors | Physics | 131 | Expired |
| US4750822A | Method and apparatus for optically detecting surface states in materials | Physics | 130 | Expired |
| US5596411A | Integrated spectroscopic ellipsometer | Physics | 130 | Expired |
| US4579463A | Detecting thermal waves to evaluate thermal parameters | Physics | 127 | Expired |
| US4854710A | Method and apparatus for evaluating surface and subsurface features in a semiconductor | Physics | 127 | Expired |
| US6972852B2 | Critical dimension analysis with simultaneous multiple angle of incidence measurements | Physics | 126 | Expired |
| US5978074A | Apparatus for evaluating metalized layers on semiconductors | Physics | 123 | Expired |
| US5074669A | Method and apparatus for evaluating ion implant dosage levels in semiconductors | Physics | 118 | Expired |
| US5159412A | Optical measurement device with enhanced sensitivity | Physics | 114 | Expired |
| US6704661B1 | Real time analysis of periodic structures on semiconductors | Physics | 113 | Expired |
| US6297880A | Apparatus for analyzing multi-layer thin film stacks on semiconductors | Physics | 112 | Expired |
| US5900939A | Thin film optical measurement system and method with calibrating ellipsometer | Physics | 110 | Expired |
| US7061627B2 | Optical scatterometry of asymmetric lines and structures | Physics | 85 | Expired |
| US5042952A | Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor | Physics | 75 | Expired |
| US4632561A | Evaluation of surface and subsurface characteristics of a sample | Physics | 74 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.