High speed, high voltage schottky semiconductor device
US5075740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A schottky diode is disclosed which has a barrier electrode formed on a semiconductor substrate for creating a schottky barrier therebetween. Also formed on the substrate is a first resistive region which surrounds the barrier electrode. The first resistive region is higher in sheet resistance than the barrier electrode and also capable of creating a schottky barrier at its interface with the semiconductor substrate. A second resistive region is formed on the first resistive region via an insulating layer and electrically connected to the barrier electrode. The sheet resistance of the second resistive region is less than that of the first resistive region. The first and second resistive regions function to improve the voltage blocking capability of the diode, particularly at the time of instantaneous transition from forward to reverse bias. There is also disclosed herein a method of most efficiently fabricating schottky semiconductor devices of the foregoing general construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.