Trench capacitor for large scale integrated memory
US5075817A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 1990 |
| Grant date | Dec 24, 1991 |
| Priority date | — |
| Expiry date | Jun 22, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A trench capacitor which has a plurality of capacitor plates separated by a dielectric within a trench on a substrate. A plate located closest to the wall of the trench may be a field shield and tied everywhere to ground. The other plate may be polysilicon. Said other plate may be tied to a source of variable potential. A plurality of sacrificial layers are established over the structure and the structure thus formed is then patterened and etched. A pass transistor is formed adjacent to the trench capacitor, and a connecting layer is established connecting the other plate of the trench capacitor to the source/drain region of the pass transistor. The connecting layer makes electrical contact to the other capacitor plate and source/drain of the pass transistor and is insulated from other layers in the capacitor and pass transistor. Bit lines and word lines can then be added, as known in the art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.