Vertical LPCVD reactor
US5076206A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1990 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Oct 31, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vertical low pressure chemical vapor deposition, LPCVD, reactor that may be used to form deposition films on semiconductor wafers is disclosed. The vertical LPCVD reactor has a reaction chamber with a top portion and a bottom portion. A furnace heats the reaction chamber. Deposition gases are introduced into the bottom portion of the reaction chamber by a gas tube having a substantial portion heated by the furnace. Deposition gases are introduced into the top portion of the reaction chamber by a gas tube that is shaped so that a substantial portion of it overlies the top portion of the reaction chamber and is heated by the furnace. By heating the substantial portion of the gas tube overlying the top portion of the reaction chamber, the deposition gases passing through this tube are heated before they enter the top portion of the reaction chamber. This improves the uniformity of deposited films on semiconductor wafers residing in the top portion of the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.