AlGaN compound semiconductor material
US5076860A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1989 |
| Grant date | Dec 31, 1991 |
| Priority date | — |
| Expiry date | Sep 29, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/113
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.