Method of manufacturing III-IV group compound semiconductor device
US5079184A · kind A · utility
33Cited by
10References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Jun 15, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.