Method of making a semiconductor laser
US5079185A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1990 |
| Grant date | Jan 7, 1992 |
| Priority date | — |
| Expiry date | Oct 10, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by placing a liquid-phase solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.