Electronic device with recovery layer proximate to active layer
US5081513A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1991 |
| Grant date | Jan 14, 1992 |
| Priority date | — |
| Expiry date | Feb 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.