Method of fabricating an X-ray exposure mask
US5082695A · kind A · utility
13Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1989 |
| Grant date | Jan 21, 1992 |
| Priority date | — |
| Expiry date | Feb 24, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.