Fumitake Mieno
53Patents
13h-index
46Co-inventors
84Inventor score
Filing activity: Mar 17, 1987 → Sep 4, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8158512B2 | Atomic layer deposition method and semiconductor device formed by the same | Electricity | 447 | Active |
| US4804560A | Method of selectively depositing tungsten upon a semiconductor substrate | Electricity | 100 | Expired |
| US4825809A | Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow | Chemistry; Metallurgy | 68 | Expired |
| US5609721A | Semiconductor device manufacturing apparatus and its cleaning method | Emerging Cross-Sectional Technologies | 64 | Expired |
| US4966861A | Vapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrate | Emerging Cross-Sectional Technologies | 59 | Expired |
| US5362981A | Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof | Electricity | 57 | Expired |
| US4879255A | Method for fabricating bipolar-MOS devices | Electricity | 52 | Expired |
| US4855254A | Method of growing a single crystalline .beta.-SiC layer on a silicon substrate | Emerging Cross-Sectional Technologies | 48 | Expired |
| US4876219A | Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers | Emerging Cross-Sectional Technologies | 44 | Expired |
| US5270224A | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5103285A | Silicon carbide barrier between silicon substrate and metal layer | Electricity | 26 | Expired |
| US5111266A | Semiconductor device having a region doped to a level exceeding the solubility limit | Electricity | 24 | Expired |
| US5518937A | Semiconductor device having a region doped to a level exceeding the solubility limit | Electricity | 15 | Expired |
| US5082695A | Method of fabricating an X-ray exposure mask | Physics | 13 | Expired |
| US5264038A | Chemical vapor deposition system | Chemistry; Metallurgy | 12 | Expired |
| US5233163A | Graphite columnar heating body for semiconductor wafer heating | Electricity | 12 | Expired |
| US5843829A | Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5589410A | An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof | Electricity | 11 | Expired |
| US5881876A | Method and vessel for storing a substrate cleaning brush | Emerging Cross-Sectional Technologies | 8 | Expired |
| US9257538B2 | Fin-type field effect transistor and manufacturing method thereof | Electricity | 6 | Active |
| US8273639B2 | Atomic layer deposition method and semiconductor device formed by the same | Electricity | 6 | Active |
| US5298458A | Method of forming tungsten film | Electricity | 5 | Expired |
| US7709386B2 | Atomic layer deposition method and semiconductor device formed by the same | Electricity | 4 | Active |
| US8492213B2 | Transistor and method for forming the same | Electricity | 4 | Active |
| US9419057B2 | Resistive random access memory device and manufacturing methods | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.