Method for selective deposition of refractory metals on silicon substrates and device formed thereby
US5084417A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1989 |
| Grant date | Jan 28, 1992 |
| Priority date | — |
| Expiry date | Mar 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective deposition of a refractory metal on a silicon substrate utilizing high temperature and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.