Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film
US5086014A · kind A · utility
43Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Sep 18, 1990 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Sep 18, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.