Method of etching a semiconductor device by an ion beam
US5086015A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1989 |
| Grant date | Feb 4, 1992 |
| Priority date | — |
| Expiry date | Aug 15, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.