Dry etching apparatus and method
US5087341A · kind A · utility
10Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1990 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | Jun 18, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus with the use of reactive gas plasma is disclosed. The apparatus comprises a vacuum chamber, and first and second electrodes opposite to each other in the chamber for generating therebetween gas plasma by discharging while introducing reactive gas in the chamber thereby etching a sample placed on the first electrode. A cover member is provided for covering at least the periphery portion positioned at the outer side of the sample on the surface of the first electrode. The reactive gas introducer is provided on the second electrode at the position opposite to the sample thereby directing the gas to the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.