Process for preparing of semiconductor device and pattern-forming coating solution used for this process
US5087551A · kind A · utility
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1References
5Claims
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Assignee
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Key dates
| Filing date | Mar 2, 1990 |
| Grant date | Feb 11, 1992 |
| Priority date | — |
| Expiry date | Mar 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the preparation of a semiconductor device and a pattern-forming coating solution used for this process are disclosed. In this process, a coating solution formed by dissolving an .alpha.-methylstyrene/methyl .alpha.-chloroacrylate copolymer as a specific positive resist material in a specific solvent is coated on a layer to be etched, which is formed on a semiconductor substrate. In this process, penetration between the substrate and the resist of the resist into the clayer to be etched, and a formation of cracks in the resist after the etching, are prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.