Method of making an article comprising a TiN.sub.x layer
US5089438A · kind A · utility
26Cited by
0References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 26, 1991 |
| Grant date | Feb 18, 1992 |
| Priority date | — |
| Expiry date | Apr 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method that comprises selective deposition of titanium nitride TiN.sub.x on III-V compound semiconductor material. The TiN.sub.x can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with H.sub.2 carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.