Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters
US5090932A · kind A · utility
72Cited by
8References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1989 |
| Grant date | Feb 25, 1992 |
| Priority date | — |
| Expiry date | Nov 16, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for the fabrication of field emission peaks using a monocrystalline substrate with a suitable orientation coated with an insulating layer where square-shaped elementary zones with a suitable orientation with respect to the substrate have been removed. Silicon is deposited by selective epitaxy in these zones. The epitaxial growth of silicon, at high speed parallel to the substrate and at low speed along faces of the substrate at 45.degree. to the substrate, enables the making of pyramidal peaks which, afater being coated with tungsten, form emitting peaks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.