Method for processing wafers in a multi station common chamber reactor

US5091217A · kind A · utility

Assignee

• Advanced Semiconductor Materials, Inc. · US

Inventors

• H. Peter W. Hey · San Jose, US
• William A. Mazak · Mesa, US
• Ravinder Aggarwal · Gilbert, US
• John H. Curtin · Phoenix, US
• Paul Brown · San Ramon, US
• Joe R. Smith · Tempe, US

Key dates

• Filing date: Sep 25, 1990
• Grant date: Feb 25, 1992
• Expiry date: Sep 25, 2010

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67109
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.