High pressure photoresist silylation process and apparatus
US5094936A · kind A · utility
19Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1990 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Jun 26, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for silylation of positive or negative photosensitive resist layer on a semiconductor wafer after the resist layer has been exposed to radiant energy through a mask which includes introducing a silylating agent to the wafer at high pressure over 760 torr and, usually, at temperatures less than 180.degree. C. Increased pressure increases the rate of silylation, allows practical use of lower process temperatures, and, therefore, allows better process control. Also an apparatus is disclosed for applying the high pressure silylation process to a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.