Fabricating a narrow width EEPROM with single diffusion electrode formation
US5094968A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | Mar 10, 1992 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/111
Abstract
An EEPROM design featuring narrow linear electrodes including a source, a drain, a thin oxide, channel and floating gate. A pair of linear, opposed field oxide barrier walls form widthwise boundaries of the active structure which can be very closely spaced. The drain electrode, implanted in the substrate, abuts both opposed field oxide lateral walls, but does not extend under either wall. The source, drain and channel are formed in a single implant followed by diffusion after the field oxide barrier walls are formed, but prior to formation of the floating gate. All but opposed field oxide walls in a stripe design. A control gate is disposed over the floating gate. The combination of opposed field oxide barrier walls, a stripe electrode design, and single step implant for electrode formation results in a very compact cell, utilizing a simplified EEPROM process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.