Steven J. Schumann
15Patents
11h-index
16Co-inventors
69Inventor score
Filing activity: Feb 7, 1986 → Sep 18, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5822245A | Dual buffer flash memory architecture with multiple operating modes | Physics | 144 | Expired |
| US5434815A | Stress reduction for non-volatile memory cell | Physics | 62 | Expired |
| US4851361A | Fabrication process for EEPROMS with high voltage transistors | Electricity | 52 | Expired |
| US5732017A | Combined program and data nonvolatile memory with concurrent program-read/data write capability | Physics | 39 | Expired |
| US5086325A | Narrow width EEPROM with single diffusion electrode formation | Electricity | 36 | Expired |
| US5094968A | Fabricating a narrow width EEPROM with single diffusion electrode formation | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6118705A | Page mode erase in a flash memory array | Physics | 32 | Expired |
| US6359810B1 | Page mode erase in a flash memory array | Physics | 28 | Expired |
| US7317630B2 | Nonvolatile semiconductor memory apparatus | Electricity | 23 | Expired |
| US4764899A | Writing speed in multi-port static rams | Physics | 12 | Expired |
| US6940759B2 | Group erasing system for flash array with multiple sectors | Physics | 12 | Expired |
| US7099226B2 | Functional register decoding system for multiple plane operation | Physics | 5 | Expired |
| US9595335B2 | Memory device and systems and methods for selecting memory cells in the memory device | Physics | 0 | Active |
| US9142306B2 | Selecting memory cells using source lines | Physics | 0 | Active |
| US7143257B2 | Method and apparatus of a smart decoding scheme for fast synchronous read in a memory system | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.