Method for improving the reactant gas flow in a reaction chamber
US5096534A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 1989 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Mar 28, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial deposition method for processing a single wafer and a reaction chamber for conducting the method. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber. Two types of reactant gas injectors can be used for controlling the velocity profile of injected gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.