Method of producing a metallization layer structure
US5096749A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Sep 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31536
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A metallization layer structure containing, in order, an aluminum nitride ceramic base layer, an aluminum titanium nitride layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing. The aluminum titanium nitride layer is formed at the interface between the aluminum nitride ceramic base layer and the titanium layer by subjecting a laminate containing, in order, an aluminum nitride ceramic base layer, a titanium layer, a heat-resistant metallic layer and a metallic layer for facilitating soldering and brazing to a heat treatment within the range of 350.degree.-1000.degree. C. for 40 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.