Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns
US5096854A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 19, 1989 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Jun 19, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for polishing a silicon wafer. The method comprises the steps of: (a) supplying a polishing fluid to a polishing surface, the polishing fluid including an alkaline fluid and polishing particles of high-purity silica dispersed in the alkaline fluid, the polishing surface being planar; (b) bringing a silicon wafer in contact with the polishing surface; and (c) moving at least one of the silicon wafer and the polishing surface relative to the other, thereby polishing the silicon wafer. The method is characterized by the following: the polishing surface is made of a ceramic material harder than the silicon wafer and more resistant to mechanochemical polishing than silicon, and the maximum roughness of the ceramic is less than 0.02 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.